A research team, led by Professor Joonki Suh in the Department of Materials Science and Engineering and the Graduate School of Semiconductor Materials and Devices Engineering at UNIST, has made a ...

ALD is based on the sequential use of a gas phase chemical process. The ALD cycle consists of four main steps: (1) pulsing of a precursor A, (2) purging of the reactor to remove excess precursor and ...

Atomic layer deposition (ALD) used to be considered too slow to be of practical use in semiconductor manufacturing, but it has emerged as a critical tool for both transistor and interconnect ...

Atomic layer deposition (ALD) originated from atomic layer epitaxy, which was introduced in 1970 and initially used in electroluminescent displays. It rapidly revolutionized semiconducting ...