Li Y, Zhao F, Cheng X, Liu H, Zan Y, Li J, Zhang Q, Wu Z, Luo J, Wang W. Four-Period Vertically Stacked SiGe/Si Channel FinFET Fabrication and Its Electrical Characteristics. Nanomaterials (Basel).

HSINCHU, Taiwan, R.O.C., Feb. 3, 2023 – TSMC today announced the launch of its “TSMC University FinFET Program,” aimed at developing future IC design talent for the industry and empowering academic ...

FinFET devices were developed to address the need for improved gate control to suppress leakage current (IOFF); DIBL (drain-induced barrier lowering); and process‐induced variability below ...

Since the inception of the integrated-circuit (IC) industry, design metrics such as performance, power, area, cost, and time-to-market have remained the same. In fact, Moore’s law is all about ...

The gate-all-around (GAA) semiconductor manufacturing process, also known as gate-all-around field-effect transistor (GAA-FET) technology, defies the performance limitations of FinFET by reducing the ...

FinFET transistors are now in production at the major foundries, having gone from drawing board to products on the shelf in record time. FinFET adoption has been growing steadily because they deliver ...

Usually, when we talk about nanometers it’s about the latest chipset. However, a Samsung team at the IEDM 2019 conference presented a technology promising 144MP image sensors based around 14nm FinFET ...

Purdue University researchers are making progress in developing a new type of transistor that uses a finlike structure instead of the conventional flat design, possibly enabling engineers to create ...

FinFET technology enabled lower leakage, reduced short-channel effects, and better performance at reduced voltages. It successfully extended CMOS scaling from the 22nm node through the 7nm generation ...

The IC industry is already weeding out the candidates. In 2005, the Semiconductor Research Corp. (SRC), a chip R&D consortium, launched the Nanoelectronics Research Initiative (NRI), a group that is ...