Magnachip Semiconductor Corporation (NYSE: MX, "Magnachip") today announced the launch of its new 7 th -generation 24V MXT LV MOSFET 1 specifically designed for battery protection circuits in ...
This N-channel enhancement mode field effect transistor is produced using high cell density, trench MOSFET technology. This product minimizes on-state resistance while providing rugged, reliable and ...
The LND250 is a high voltage N-channel depletion mode (normally-on) transistor utilizing Supertex’s lateral DMOS technology. The transistor has excellent thermal stability which operates at -55 ºC to ...
Find a downloadable version of this story in pdf format at the end of the story. TYPICAL HIGH-SIDE, n-channel, hot-swap “soft-switch” systems use a charge pump to drive the gate of an external MOSFET ...
SEOUL, South Korea--(BUSINESS WIRE)--Magnachip Semiconductor Corporation (“Magnachip” or “Company”) (NYSE: MX) announced the release of its 8th-generation 1) MXT LV MOSFET (Metal Oxide Semiconductor ...
New Yorker Electronics is aiming at displacing PowerPAK 1212 packaged mosfets by stocking a pair of symmetric 80V n-channel mosfets in a single 3.3 x 3.3mm package from Vishay. Called SiZF4800LDT, the ...
A research team has developed an n-channel diamond MOSFET (metal-oxide-semiconductor field-effect transistor). The developed n-channel diamond MOSFET provides a key step toward CMOS (complementary ...
The source voltage of a P-channel device is stationary when the device operates as an HS switch. Conversely, the source voltage of an N-channel device used as an HS switch varies between the low side ...
Using this device configuration, we measured electron field-effect mobilities for a broad range of polymer semiconductors. Poly(fluorene)-based (F8-based) polymers typically give µ e,FET in the range ...
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