The dual SiC MOSFET module combines an 800 A drain-current rating with a 300 kA²s diode I²t rating for demanding power ...

Large surge currents that can flow through power semiconductor modules in abnormal conditions must be countered by a ...

Magnachip Semiconductor Corporation (NYSE: MX, "Magnachip") today announced the expansion of its power semiconductor portfolio with 15 new sixth-generation (Gen6) E6 super-junction (SJ) MOSFETs for ...

Renesas Electronics has expanded its gallium nitride (GaN) portfolio with the launch of its first family of 100V enhancement-mode (E-mode) GaN power transistors, targeting applications including AI ...

Solid-state circuit breakers (SSCBs) have many advantages over mechanical breakers. While silicon carbide (SiC)-based SSCBs create advantages in improved efficiencies, a hybrid SSCB based on a ...

Global Total Market Size of Power Semiconductor Devices Basic Characteristics of the Power Semiconductor Device Market Power ...

The global xEV power chip market was valued at USD 9.29 billion in 2025 and is projected to reach USD 30.52 billion by 2035, ...

Four new devices target humanoid robots and industrial systems, offering silicon-compatible footprints and claimed switching-loss cuts of 40–70%.

ROHM Semiconductor today announced it has developed the RS4P063BPHZG, a 100V MOSFET optimized for automotive safety functions and protection circuits. The new product achieves industry-leading* ...

China’s IGBT module supply landscape in 2026 is served by two broadly distinct groups: multi-brand distributors and trading companies that carry modules across several original brands, and vertically ...

Renesas has introduced a 650V GaN FET in a dual-side-cooled 8×8mm package designed to improve power density and thermal ...

Sociedad Quimica y Minera de Chile S.A. Series B-1.25% $17.44T Sociedad Quimica y Minera de Chile S.A. A 0.00% $17.44T ...