News

IceGaN is a form of smart power HEMT that features advanced sensing and protection capabilities. According to Daniel Murphy, ...
UV-C LED disinfection system company AquiSense has secured Series A investment led by Burnt Island Ventures, following a ...
At the upcoming PCIM Conference (6th - 8th May, Nuremberg, Germany) Fraunhofer IAF will present a paper on a novel GaN ...
A team of UK scientists at Queen Mary University of London, University of Nottingham and University of Glasgow has received a ...
Semikron Danfoss module uses Rohm 2kV SiC MOSFETs for SMA’s new large scale solar system SMA Solar Technology AG, a global ...
Rohm has developed new 4-in-1 and 6-in-1 SiC muolded modules in the HSDIP20 package optimised for PFC and LLC converters in ...
Replayer, a new software solution designed to streamline End Point recipe development and process optimisation for users of ...
“Industry 5.0 demands faster, smarter, and more robust networks,” said Efstathios Andrianopoulos, a researcher on the ICCS ...
NCT has been working on commercialisation of β-Ga 2 O 3 MOSFETs since 2019. This time, the world’s highest PFOM for β-Ga 2 O ...
Cambridge GaN Devices (CGD) will demonstrate at PCIM how GaN technology is delivering improved performance in higher power ...
It’s not easy to transfer arrays of incredibly small, vertical GaN-based microLEDs to another platform. But there is a promising solution: selective-area growth of these emitters on hexagonal boron ...
For future space missions, makers of electrical systems need better power devices, a requirement that’s met by SiC.